Cross section and resonance effects in photoemission from Sn-doped In2O3(111)
Photoemission spectra of Sn-doped In 2O 3(111) have been measured using a range of photon energies between 40 and 1300 eV. The intensity of structure at the bottom of the valence band associated with states of mixed Sn 5s/O 2p character increases wit...
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| Format: | Journal article |
| Language: | English |
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2012
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| _version_ | 1797078332607561728 |
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| author | Zhang, K Payne, D Egdell, R |
| author_facet | Zhang, K Payne, D Egdell, R |
| author_sort | Zhang, K |
| collection | OXFORD |
| description | Photoemission spectra of Sn-doped In 2O 3(111) have been measured using a range of photon energies between 40 and 1300 eV. The intensity of structure at the bottom of the valence band associated with states of mixed Sn 5s/O 2p character increases with increasing photon energy relative to that of states of more dominantly O 2p character at the top of the valence band, as expected from one electron ionisation cross sections. In addition a pronounced resonance in the intensity of a weak conduction band feature is observed around the In 4p core threshold. © 2011 Elsevier Ltd. All rights reserved. |
| first_indexed | 2024-03-07T00:30:34Z |
| format | Journal article |
| id | oxford-uuid:7fa708b1-e089-4dd0-937c-e761cb7f7c5e |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T00:30:34Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | oxford-uuid:7fa708b1-e089-4dd0-937c-e761cb7f7c5e2022-03-26T21:18:17ZCross section and resonance effects in photoemission from Sn-doped In2O3(111)Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:7fa708b1-e089-4dd0-937c-e761cb7f7c5eEnglishSymplectic Elements at Oxford2012Zhang, KPayne, DEgdell, RPhotoemission spectra of Sn-doped In 2O 3(111) have been measured using a range of photon energies between 40 and 1300 eV. The intensity of structure at the bottom of the valence band associated with states of mixed Sn 5s/O 2p character increases with increasing photon energy relative to that of states of more dominantly O 2p character at the top of the valence band, as expected from one electron ionisation cross sections. In addition a pronounced resonance in the intensity of a weak conduction band feature is observed around the In 4p core threshold. © 2011 Elsevier Ltd. All rights reserved. |
| spellingShingle | Zhang, K Payne, D Egdell, R Cross section and resonance effects in photoemission from Sn-doped In2O3(111) |
| title | Cross section and resonance effects in photoemission from Sn-doped In2O3(111) |
| title_full | Cross section and resonance effects in photoemission from Sn-doped In2O3(111) |
| title_fullStr | Cross section and resonance effects in photoemission from Sn-doped In2O3(111) |
| title_full_unstemmed | Cross section and resonance effects in photoemission from Sn-doped In2O3(111) |
| title_short | Cross section and resonance effects in photoemission from Sn-doped In2O3(111) |
| title_sort | cross section and resonance effects in photoemission from sn doped in2o3 111 |
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