Cross section and resonance effects in photoemission from Sn-doped In2O3(111)
Photoemission spectra of Sn-doped In 2O 3(111) have been measured using a range of photon energies between 40 and 1300 eV. The intensity of structure at the bottom of the valence band associated with states of mixed Sn 5s/O 2p character increases wit...
| Những tác giả chính: | , , |
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| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
2012
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