Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers

Míreanna comhchosúla

• Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
  de réir: Park, Y, et al.
  Foilsithe / Cruthaithe: (2010)
• Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
  de réir: Hideyuki Itakura, et al.
  Foilsithe / Cruthaithe: (2020-02-01)
• Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
  de réir: Ju, Zhen Gang, et al.
  Foilsithe / Cruthaithe: (2016)
• Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
  de réir: Park, Y, et al.
  Foilsithe / Cruthaithe: (2018)
• Carrier localization mechanisms in InGaN/GaN quantum wells
  de réir: Watson-Parris, D, et al.
  Foilsithe / Cruthaithe: (2011)