Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
We investigated the carrier transition properties of the GaN/InGaN/GaN single quantum well bounded by AlGaN barriers. In order to confirm the carrier transition coming from the single quantum well, the single quantum well layer was etched by reactive ion etching method. The structural property of th...
| Autors principals: | , , , , , , |
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| Format: | Journal article |
| Idioma: | English |
| Publicat: |
2011
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