Origin of superconductivity in boron-doped silicon carbide from first principles
We investigate the origin of superconductivity in boron-doped silicon carbide using a first-principles approach. The strength of the electron-phonon coupling calculated for cubic SiC at the experimental doping level suggests that the superconductivity observed in this material is phonon mediated. An...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
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2009
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| _version_ | 1826281642326491136 |
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| author | Noffsinger, J Giustino, F Louie, S Cohen, M |
| author_facet | Noffsinger, J Giustino, F Louie, S Cohen, M |
| author_sort | Noffsinger, J |
| collection | OXFORD |
| description | We investigate the origin of superconductivity in boron-doped silicon carbide using a first-principles approach. The strength of the electron-phonon coupling calculated for cubic SiC at the experimental doping level suggests that the superconductivity observed in this material is phonon mediated. Analysis of the 2H-SiC, 4H-SiC, 6H-SiC, and 3C-SiC polytypes indicates that superconductivity depends on the stacking of the Si and C layers and that the cubic polytype will exhibit the highest transition temperature. In contrast to the cases of silicon and diamond, acoustic phonons are found to play a major role in the superconductivity of silicon carbide. © 2009 The American Physical Society. |
| first_indexed | 2024-03-07T00:31:52Z |
| format | Journal article |
| id | oxford-uuid:8014a3e6-ff70-4400-81b4-2f9e0017f509 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T00:31:52Z |
| publishDate | 2009 |
| record_format | dspace |
| spelling | oxford-uuid:8014a3e6-ff70-4400-81b4-2f9e0017f5092022-03-26T21:21:01ZOrigin of superconductivity in boron-doped silicon carbide from first principlesJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:8014a3e6-ff70-4400-81b4-2f9e0017f509EnglishSymplectic Elements at Oxford2009Noffsinger, JGiustino, FLouie, SCohen, MWe investigate the origin of superconductivity in boron-doped silicon carbide using a first-principles approach. The strength of the electron-phonon coupling calculated for cubic SiC at the experimental doping level suggests that the superconductivity observed in this material is phonon mediated. Analysis of the 2H-SiC, 4H-SiC, 6H-SiC, and 3C-SiC polytypes indicates that superconductivity depends on the stacking of the Si and C layers and that the cubic polytype will exhibit the highest transition temperature. In contrast to the cases of silicon and diamond, acoustic phonons are found to play a major role in the superconductivity of silicon carbide. © 2009 The American Physical Society. |
| spellingShingle | Noffsinger, J Giustino, F Louie, S Cohen, M Origin of superconductivity in boron-doped silicon carbide from first principles |
| title | Origin of superconductivity in boron-doped silicon carbide from first principles |
| title_full | Origin of superconductivity in boron-doped silicon carbide from first principles |
| title_fullStr | Origin of superconductivity in boron-doped silicon carbide from first principles |
| title_full_unstemmed | Origin of superconductivity in boron-doped silicon carbide from first principles |
| title_short | Origin of superconductivity in boron-doped silicon carbide from first principles |
| title_sort | origin of superconductivity in boron doped silicon carbide from first principles |
| work_keys_str_mv | AT noffsingerj originofsuperconductivityinborondopedsiliconcarbidefromfirstprinciples AT giustinof originofsuperconductivityinborondopedsiliconcarbidefromfirstprinciples AT louies originofsuperconductivityinborondopedsiliconcarbidefromfirstprinciples AT cohenm originofsuperconductivityinborondopedsiliconcarbidefromfirstprinciples |