Nitrogen-doped silicon: Mechanical, transport and electrical properties

Nitrogen-doped silicon: Mechanical, transport and electrical properties

A novel dislocation locking technique is used to study the behaviour of nitrogen in float-zone silicon (FZ-Si). Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen diffuses to the dislocations. The stres...

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Bibliografiske detaljer
Main Authors:	Murphy, J, Alpass, C, Giannattasio, A, Senkader, S, Emiroglu, D, Evans-Freeman, J, Falster, R, Wilshaw, P
Format:	Journal article
Sprog:	English
Udgivet:	2006

Lignende værker

Nitrogen in silicon: Transport and mechanical properties
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Udgivet: (2006)

Nitrogen in silicon: Transport and mechanical properties
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The influence of nitrogen on dislocation locking in float-zone silicon
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The influence of nitrogen on dislocation locking in float-zone silicon
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Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
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Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
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Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
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Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
af: Murphy, J, et al.
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Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)
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Dislocation locking by nitrogen impurities in FZ-silicon
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Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
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Impurity locking of dislocations in silicon
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Nitrogen diffusion and interaction with dislocations in single-crystal silicon
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Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
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Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
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Udgivet: (2006)

Generation of dislocation glide loops in Czochralski silicon
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Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
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Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
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The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
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Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
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The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers
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The properties of nitrogen in silicon
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Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
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Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
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Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
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The segregation behaviour of oxygen at dislocations in silicon
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Locking of dislocations by oxygen in Cz-silicon
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On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures
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On the locking of dislocations by oxygen in silicon
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Onset of slip in silicon containing oxide precipitates
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A room temperature cathodoluminescence study of dislocations in silicon
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High resolution deep level transient spectroscopy applied to extended defects in silicon
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Near-band gap luminescence at room temperature from dislocations in silicon
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The role of dislocations in producing efficient near-bandgap luminescence from silicon
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'Semi-insulating' silicon using deep level impurity doping: problems and potential
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Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon
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A study of oxygen dislocation interactions in CZ-Si
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The properties of nitrogen and oxygen in silicon
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