Nitrogen-doped silicon: Mechanical, transport and electrical properties
A novel dislocation locking technique is used to study the behaviour of nitrogen in float-zone silicon (FZ-Si). Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen diffuses to the dislocations. The stres...
المؤلفون الرئيسيون: | Murphy, J, Alpass, C, Giannattasio, A, Senkader, S, Emiroglu, D, Evans-Freeman, J, Falster, R, Wilshaw, P |
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التنسيق: | Journal article |
اللغة: | English |
منشور في: |
2006
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مواد مشابهة
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Nitrogen in silicon: Transport and mechanical properties
حسب: Murphy, J, وآخرون
منشور في: (2006) -
Nitrogen in silicon: Transport and mechanical properties
حسب: Murphy, J, وآخرون
منشور في: (2006) -
The influence of nitrogen on dislocation locking in float-zone silicon
حسب: Murphy, J, وآخرون
منشور في: (2005) -
The influence of nitrogen on dislocation locking in float-zone silicon
حسب: Murphy, J, وآخرون
منشور في: (2005) -
Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
حسب: Alpass, C, وآخرون
منشور في: (2007)