Nitrogen-doped silicon: Mechanical, transport and electrical properties
A novel dislocation locking technique is used to study the behaviour of nitrogen in float-zone silicon (FZ-Si). Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen diffuses to the dislocations. The stres...
Main Authors: | Murphy, J, Alpass, C, Giannattasio, A, Senkader, S, Emiroglu, D, Evans-Freeman, J, Falster, R, Wilshaw, P |
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פורמט: | Journal article |
שפה: | English |
יצא לאור: |
2006
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פריטים דומים
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Nitrogen in silicon: Transport and mechanical properties
מאת: Murphy, J, et al.
יצא לאור: (2006) -
Nitrogen in silicon: Transport and mechanical properties
מאת: Murphy, J, et al.
יצא לאור: (2006) -
The influence of nitrogen on dislocation locking in float-zone silicon
מאת: Murphy, J, et al.
יצא לאור: (2005) -
The influence of nitrogen on dislocation locking in float-zone silicon
מאת: Murphy, J, et al.
יצא לאור: (2005) -
Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
מאת: Alpass, C, et al.
יצא לאור: (2007)