Nitrogen-doped silicon: Mechanical, transport and electrical properties

Nitrogen-doped silicon: Mechanical, transport and electrical properties

A novel dislocation locking technique is used to study the behaviour of nitrogen in float-zone silicon (FZ-Si). Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen diffuses to the dislocations. The stres...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид:	Murphy, J, Alpass, C, Giannattasio, A, Senkader, S, Emiroglu, D, Evans-Freeman, J, Falster, R, Wilshaw, P
Формат:	Journal article
Хэл сонгох:	English
Хэвлэсэн:	2006

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