Nitrogen-doped silicon: Mechanical, transport and electrical properties
A novel dislocation locking technique is used to study the behaviour of nitrogen in float-zone silicon (FZ-Si). Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen diffuses to the dislocations. The stres...
| Автори: | , , , , , , , |
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| Формат: | Journal article |
| Мова: | English |
| Опубліковано: |
2006
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