RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE

Manylion Llyfryddiaeth
Prif Awduron:	Wilshaw, P, Fell, T, Booker, G
Fformat:	Conference item
Cyhoeddwyd:	1989

Eitemau Tebyg

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
gan: Galloway, S, et al.
Cyhoeddwyd: (1993)

PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
gan: Demenet, J, et al.
Cyhoeddwyd: (1989)

MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE
gan: Alexander, H, et al.
Cyhoeddwyd: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1989)

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1986)

VLSI fabrication principles : silicon and gallium arsenide /
gan: 359597 Ghandi, Sorab K.
Cyhoeddwyd: (1994)

VLSI fabrication principles: silicon and gallium arsenide/
gan: 359597 Ghandi, Sorab K.
Cyhoeddwyd: (1983)

FRACTURE AND CRACK TIP PLASTICITY IN SILICON AND GALLIUM-ARSENIDE
gan: Michot, G, et al.
Cyhoeddwyd: (1989)

Gallium arsenide /
gan: Blakemore, John Sydney
Cyhoeddwyd: (1987)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1989)

Gallium arsenide : proceedings /
gan: International Gallium Arsenide Symposium, (2nd : 1968 Dallas, Texas), et al.
Cyhoeddwyd: (1969)

Gallium interstitial contributions to diffusion in gallium arsenide
gan: Joseph T. Schick, et al.
Cyhoeddwyd: (2011-09-01)

THE EFFECT OF DIFFERENT TRANSITION-METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS
gan: Fell, T, et al.
Cyhoeddwyd: (1991)

Dielectric films on gallium arsenide /
gan: 351413 Croydon, W. F., et al.
Cyhoeddwyd: (1981)

Gallium arsenide and related compounds,
gan: International Symposium on Gallium Arsenide and related compounds (5th : 1974 : Deauville), et al.
Cyhoeddwyd: (1975)

Gallium arsenide and related compounds /
gan: 472172 International Symposium on Gallium Arsenide and Related Compounds (13th : 1986 : Las Vegas), et al.
Cyhoeddwyd: (1987)

Gallium arsenide and related compounds /
gan: International Symposium on Gallium Arsenide and Related Compounds (6th, 1976 : Edinburg), et al.
Cyhoeddwyd: (1977)

Experiments in gallium arsenide technology /
gan: 225814 Branning, D. J., et al.
Cyhoeddwyd: (1988)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1993)

Gallium arsenide nanoparticles: synthesis and characterisation
gan: Malik, M, et al.
Cyhoeddwyd: (2003)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
gan: Fell, T, et al.
Cyhoeddwyd: (1991)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1983)

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
gan: Wilshaw, P, et al.
Cyhoeddwyd: (1985)

Growth rate gallium arsenide nanowires /
gan: Rosnita Muhammad, 1972-, author, et al.
Cyhoeddwyd: (2009)

Gallium arsenide and related compounds 1985 /
gan: International Symposium on Gallium Arsenide and Related Compounds (12th : 1985 : Karuizawa, Japan)
Cyhoeddwyd: (1986)

Gallium arsenide and related compounds : proccedings /
gan: International Symposium on Gallium Arsenide and Related Compounds (6th : 1976 : St. Louis), et al.
Cyhoeddwyd: (1977)

Gallium arsenide and related compounds : proceedings
gan: International Symposium on Gallium Arsenide and Related Compounds (4th : 1972 : Boulder, Colorado)
Cyhoeddwyd: (1973)

Gallium arsenide and related compounds, 1978 /
gan: International Symposium on Gallium Arsenide and Related Compounds (7th : 1978 : St. Louis), et al.
Cyhoeddwyd: (1979)

Gallium arsenide and related compounds : proceedings /
gan: International Symposium on Gallium Arsenide and Related Compounds, (3rd : 1970 : Aachen), et al.
Cyhoeddwyd: (1971)

Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI
gan: S. P. Novosyadliy, et al.
Cyhoeddwyd: (2020-06-01)

Gallium arsenide pixel detectors for medical imaging
gan: DaVia, C, et al.
Cyhoeddwyd: (1997)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1982)

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
gan: Ourmazd, A, et al.
Cyhoeddwyd: (1983)

Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)
gan: P. G. Gucciardi, et al.
Cyhoeddwyd: (2011-09-01)

Synthesis of Polytypic Gallium Phosphide and Gallium Arsenide Nanowires and Their Application as Photodetectors
gan: Kidong Park, et al.
Cyhoeddwyd: (2019-02-01)

Gallium arsenide : proceedings of the international symposium [mikrofis]
gan: Institute of Physics (Great Britain)
Cyhoeddwyd: (1966)