RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE

Bibliografiska uppgifter
Huvudupphovsmän:	Wilshaw, P, Fell, T, Booker, G
Materialtyp:	Conference item
Publicerad:	1989

Liknande verk

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
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PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
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MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE
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RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
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RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
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DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
av: Wilshaw, P, et al.
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VLSI fabrication principles : silicon and gallium arsenide /
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VLSI fabrication principles: silicon and gallium arsenide/
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FRACTURE AND CRACK TIP PLASTICITY IN SILICON AND GALLIUM-ARSENIDE
av: Michot, G, et al.
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Gallium arsenide /
av: Blakemore, John Sydney
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THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
av: Wilshaw, P, et al.
Publicerad: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
av: Wilshaw, P, et al.
Publicerad: (1989)

Gallium arsenide : proceedings /
av: International Gallium Arsenide Symposium, (2nd : 1968 Dallas, Texas), et al.
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Gallium interstitial contributions to diffusion in gallium arsenide
av: Joseph T. Schick, et al.
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THE EFFECT OF DIFFERENT TRANSITION-METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS
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Dielectric films on gallium arsenide /
av: 351413 Croydon, W. F., et al.
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Gallium arsenide and related compounds,
av: International Symposium on Gallium Arsenide and related compounds (5th : 1974 : Deauville), et al.
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Gallium arsenide and related compounds /
av: 472172 International Symposium on Gallium Arsenide and Related Compounds (13th : 1986 : Las Vegas), et al.
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Gallium arsenide and related compounds /
av: International Symposium on Gallium Arsenide and Related Compounds (6th, 1976 : Edinburg), et al.
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Experiments in gallium arsenide technology /
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EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
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Gallium arsenide nanoparticles: synthesis and characterisation
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QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
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QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
av: Fell, T, et al.
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TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
av: Ourmazd, A, et al.
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THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
av: Ourmazd, A, et al.
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NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
av: Wilshaw, P, et al.
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Growth rate gallium arsenide nanowires /
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Gallium arsenide and related compounds 1985 /
av: International Symposium on Gallium Arsenide and Related Compounds (12th : 1985 : Karuizawa, Japan)
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Gallium arsenide and related compounds : proccedings /
av: International Symposium on Gallium Arsenide and Related Compounds (6th : 1976 : St. Louis), et al.
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Gallium arsenide and related compounds : proceedings
av: International Symposium on Gallium Arsenide and Related Compounds (4th : 1972 : Boulder, Colorado)
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Gallium arsenide and related compounds, 1978 /
av: International Symposium on Gallium Arsenide and Related Compounds (7th : 1978 : St. Louis), et al.
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Gallium arsenide and related compounds : proceedings /
av: International Symposium on Gallium Arsenide and Related Compounds, (3rd : 1970 : Aachen), et al.
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Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI
av: S. P. Novosyadliy, et al.
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Gallium arsenide pixel detectors for medical imaging
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ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
av: Ourmazd, A, et al.
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THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
av: Ourmazd, A, et al.
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Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)
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Synthesis of Polytypic Gallium Phosphide and Gallium Arsenide Nanowires and Their Application as Photodetectors
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Gallium arsenide : proceedings of the international symposium [mikrofis]
av: Institute of Physics (Great Britain)
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