Structural, electronic, and magnetic investigation of magnetic ordering in MBE-grown CrxSb2−xTe3 thin films
We report the structural, electronic, and magnetic study of Cr-doped Sb2Te3 thin films grown by a two-step deposition process using molecular-beam epitaxy (MBE). The samples were investigated using a variety of complementary techniques, namely, x-ray diffraction (XRD), atomic force microscopy, SQUID...
Main Authors: | , , , , , , , , , , , , , |
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Format: | Journal article |
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European Physical Society
2016
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author | Collins-McIntyre, L Duffy, L Singh, A Steinke, N Kinane, C Charlton, T Pushp, A Kellock, A Parkin, S Holmes, S Barnes, C van der Laan, G Langridge, S Hesjedal, T |
author_facet | Collins-McIntyre, L Duffy, L Singh, A Steinke, N Kinane, C Charlton, T Pushp, A Kellock, A Parkin, S Holmes, S Barnes, C van der Laan, G Langridge, S Hesjedal, T |
author_sort | Collins-McIntyre, L |
collection | OXFORD |
description | We report the structural, electronic, and magnetic study of Cr-doped Sb2Te3 thin films grown by a two-step deposition process using molecular-beam epitaxy (MBE). The samples were investigated using a variety of complementary techniques, namely, x-ray diffraction (XRD), atomic force microscopy, SQUID magnetometry, magneto-transport, and polarized neutron reflectometry (PNR). It is found that the samples retain good crystalline order up to a doping level of x = 0:42 (in CrxSb2 xTe3), above which degradation of the crystal structure is observed by XRD. Fits to the recorded XRD spectra indicate a general reduction in c-axis lattice parameter as a function of doping, consistent with substitutional doping with an ion of smaller ionic radius. The samples show soft ferromagnetic behavior with the easy axis of magnetization being out-of-plane. The saturation magnetization is dependent on the doping level, and reaches from ~2 μB to almost 3 μB per Cr ion. The transition temperature (Tc) depends strongly on the Cr concentration and is found to increase with doping concentration. For the highest achievable doping level for phase-pure films of x = 0:42, a Tc of 125 K was determined. Electric transport measurements find surface-dominated transport below ~10 K. The magnetic properties extracted from anomalous Hall effect data are in excellent agreement with the magnetometry data. PNR studies indicate a uniform magnetization profile throughout the film, with no indication of enhanced magnetic order towards the sample surface. |
first_indexed | 2024-03-07T00:38:26Z |
format | Journal article |
id | oxford-uuid:82371d90-6b66-4823-b2a1-59bfaf3dbef8 |
institution | University of Oxford |
last_indexed | 2024-03-07T00:38:26Z |
publishDate | 2016 |
publisher | European Physical Society |
record_format | dspace |
spelling | oxford-uuid:82371d90-6b66-4823-b2a1-59bfaf3dbef82022-03-26T21:35:53ZStructural, electronic, and magnetic investigation of magnetic ordering in MBE-grown CrxSb2−xTe3 thin filmsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:82371d90-6b66-4823-b2a1-59bfaf3dbef8Symplectic Elements at OxfordEuropean Physical Society2016Collins-McIntyre, LDuffy, LSingh, ASteinke, NKinane, CCharlton, TPushp, AKellock, AParkin, SHolmes, SBarnes, Cvan der Laan, GLangridge, SHesjedal, TWe report the structural, electronic, and magnetic study of Cr-doped Sb2Te3 thin films grown by a two-step deposition process using molecular-beam epitaxy (MBE). The samples were investigated using a variety of complementary techniques, namely, x-ray diffraction (XRD), atomic force microscopy, SQUID magnetometry, magneto-transport, and polarized neutron reflectometry (PNR). It is found that the samples retain good crystalline order up to a doping level of x = 0:42 (in CrxSb2 xTe3), above which degradation of the crystal structure is observed by XRD. Fits to the recorded XRD spectra indicate a general reduction in c-axis lattice parameter as a function of doping, consistent with substitutional doping with an ion of smaller ionic radius. The samples show soft ferromagnetic behavior with the easy axis of magnetization being out-of-plane. The saturation magnetization is dependent on the doping level, and reaches from ~2 μB to almost 3 μB per Cr ion. The transition temperature (Tc) depends strongly on the Cr concentration and is found to increase with doping concentration. For the highest achievable doping level for phase-pure films of x = 0:42, a Tc of 125 K was determined. Electric transport measurements find surface-dominated transport below ~10 K. The magnetic properties extracted from anomalous Hall effect data are in excellent agreement with the magnetometry data. PNR studies indicate a uniform magnetization profile throughout the film, with no indication of enhanced magnetic order towards the sample surface. |
spellingShingle | Collins-McIntyre, L Duffy, L Singh, A Steinke, N Kinane, C Charlton, T Pushp, A Kellock, A Parkin, S Holmes, S Barnes, C van der Laan, G Langridge, S Hesjedal, T Structural, electronic, and magnetic investigation of magnetic ordering in MBE-grown CrxSb2−xTe3 thin films |
title | Structural, electronic, and magnetic investigation of magnetic ordering in MBE-grown CrxSb2−xTe3 thin films |
title_full | Structural, electronic, and magnetic investigation of magnetic ordering in MBE-grown CrxSb2−xTe3 thin films |
title_fullStr | Structural, electronic, and magnetic investigation of magnetic ordering in MBE-grown CrxSb2−xTe3 thin films |
title_full_unstemmed | Structural, electronic, and magnetic investigation of magnetic ordering in MBE-grown CrxSb2−xTe3 thin films |
title_short | Structural, electronic, and magnetic investigation of magnetic ordering in MBE-grown CrxSb2−xTe3 thin films |
title_sort | structural electronic and magnetic investigation of magnetic ordering in mbe grown crxsb2 xte3 thin films |
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