Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition
e show how an oxide passivating layer on the Cu surface before the growth of h-BN by chemical vapor deposition (CVD) can lead to increased domain sizes from 1 to 20 μm by reducing the nucleation density from 10 6 to 10 3 mm -2 . The h-BN domains within each Cu grain are well-oriented, indicating a...
Main Authors: | , , , , , , |
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Format: | Journal article |
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American Chemical Society
2017
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_version_ | 1797079135207555072 |
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author | Chang, R-J Wang, X Wang, S Sheng, Y Porter, BF Bhaskaran, H Warner, JH |
author_facet | Chang, R-J Wang, X Wang, S Sheng, Y Porter, BF Bhaskaran, H Warner, JH |
author_sort | Chang, R-J |
collection | OXFORD |
description | e show how an oxide passivating layer on the Cu surface before the growth of h-BN by chemical vapor deposition (CVD) can lead to increased domain sizes from 1 to 20 μm by reducing the nucleation density from 10 6 to 10 3 mm -2 . The h-BN domains within each Cu grain are well-oriented, indicating an epitaxial relationship between the h-BN crystals and the Cu growth substrates that leads to larger crystal domains within the film of ∼100 μm. Continuous films are grown and show a high degree of monolayer uniformity. This CVD approach removes the need for low pressures, electrochemical polishing, and expensive substrates for large-area continuous films of h-BN monolayers, which is beneficial for industrial applications that require scalable synthesis. |
first_indexed | 2024-03-07T00:41:24Z |
format | Journal article |
id | oxford-uuid:832a58b0-4ece-41fc-8579-6f95aee0ac2e |
institution | University of Oxford |
last_indexed | 2024-03-07T00:41:24Z |
publishDate | 2017 |
publisher | American Chemical Society |
record_format | dspace |
spelling | oxford-uuid:832a58b0-4ece-41fc-8579-6f95aee0ac2e2022-03-26T21:42:22ZGrowth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor depositionJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:832a58b0-4ece-41fc-8579-6f95aee0ac2eSymplectic Elements at OxfordAmerican Chemical Society2017Chang, R-JWang, XWang, SSheng, YPorter, BFBhaskaran, HWarner, JHe show how an oxide passivating layer on the Cu surface before the growth of h-BN by chemical vapor deposition (CVD) can lead to increased domain sizes from 1 to 20 μm by reducing the nucleation density from 10 6 to 10 3 mm -2 . The h-BN domains within each Cu grain are well-oriented, indicating an epitaxial relationship between the h-BN crystals and the Cu growth substrates that leads to larger crystal domains within the film of ∼100 μm. Continuous films are grown and show a high degree of monolayer uniformity. This CVD approach removes the need for low pressures, electrochemical polishing, and expensive substrates for large-area continuous films of h-BN monolayers, which is beneficial for industrial applications that require scalable synthesis. |
spellingShingle | Chang, R-J Wang, X Wang, S Sheng, Y Porter, BF Bhaskaran, H Warner, JH Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition |
title | Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition |
title_full | Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition |
title_fullStr | Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition |
title_full_unstemmed | Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition |
title_short | Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition |
title_sort | growth of large single crystalline monolayer hexagonal boron nitride by oxide assisted chemical vapor deposition |
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