Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition
e show how an oxide passivating layer on the Cu surface before the growth of h-BN by chemical vapor deposition (CVD) can lead to increased domain sizes from 1 to 20 μm by reducing the nucleation density from 10 6 to 10 3 mm -2 . The h-BN domains within each Cu grain are well-oriented, indicating a...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
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American Chemical Society
2017
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| _version_ | 1797079135207555072 |
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| author | Chang, R-J Wang, X Wang, S Sheng, Y Porter, BF Bhaskaran, H Warner, JH |
| author_facet | Chang, R-J Wang, X Wang, S Sheng, Y Porter, BF Bhaskaran, H Warner, JH |
| author_sort | Chang, R-J |
| collection | OXFORD |
| description | e show how an oxide passivating layer on the Cu surface before the growth of h-BN by chemical vapor deposition (CVD) can lead to increased domain sizes from 1 to 20 μm by reducing the nucleation density from 10 6 to 10 3 mm -2 . The h-BN domains within each Cu grain are well-oriented, indicating an epitaxial relationship between the h-BN crystals and the Cu growth substrates that leads to larger crystal domains within the film of ∼100 μm. Continuous films are grown and show a high degree of monolayer uniformity. This CVD approach removes the need for low pressures, electrochemical polishing, and expensive substrates for large-area continuous films of h-BN monolayers, which is beneficial for industrial applications that require scalable synthesis. |
| first_indexed | 2024-03-07T00:41:24Z |
| format | Journal article |
| id | oxford-uuid:832a58b0-4ece-41fc-8579-6f95aee0ac2e |
| institution | University of Oxford |
| last_indexed | 2024-03-07T00:41:24Z |
| publishDate | 2017 |
| publisher | American Chemical Society |
| record_format | dspace |
| spelling | oxford-uuid:832a58b0-4ece-41fc-8579-6f95aee0ac2e2022-03-26T21:42:22ZGrowth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor depositionJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:832a58b0-4ece-41fc-8579-6f95aee0ac2eSymplectic Elements at OxfordAmerican Chemical Society2017Chang, R-JWang, XWang, SSheng, YPorter, BFBhaskaran, HWarner, JHe show how an oxide passivating layer on the Cu surface before the growth of h-BN by chemical vapor deposition (CVD) can lead to increased domain sizes from 1 to 20 μm by reducing the nucleation density from 10 6 to 10 3 mm -2 . The h-BN domains within each Cu grain are well-oriented, indicating an epitaxial relationship between the h-BN crystals and the Cu growth substrates that leads to larger crystal domains within the film of ∼100 μm. Continuous films are grown and show a high degree of monolayer uniformity. This CVD approach removes the need for low pressures, electrochemical polishing, and expensive substrates for large-area continuous films of h-BN monolayers, which is beneficial for industrial applications that require scalable synthesis. |
| spellingShingle | Chang, R-J Wang, X Wang, S Sheng, Y Porter, BF Bhaskaran, H Warner, JH Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition |
| title | Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition |
| title_full | Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition |
| title_fullStr | Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition |
| title_full_unstemmed | Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition |
| title_short | Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition |
| title_sort | growth of large single crystalline monolayer hexagonal boron nitride by oxide assisted chemical vapor deposition |
| work_keys_str_mv | AT changrj growthoflargesinglecrystallinemonolayerhexagonalboronnitridebyoxideassistedchemicalvapordeposition AT wangx growthoflargesinglecrystallinemonolayerhexagonalboronnitridebyoxideassistedchemicalvapordeposition AT wangs growthoflargesinglecrystallinemonolayerhexagonalboronnitridebyoxideassistedchemicalvapordeposition AT shengy growthoflargesinglecrystallinemonolayerhexagonalboronnitridebyoxideassistedchemicalvapordeposition AT porterbf growthoflargesinglecrystallinemonolayerhexagonalboronnitridebyoxideassistedchemicalvapordeposition AT bhaskaranh growthoflargesinglecrystallinemonolayerhexagonalboronnitridebyoxideassistedchemicalvapordeposition AT warnerjh growthoflargesinglecrystallinemonolayerhexagonalboronnitridebyoxideassistedchemicalvapordeposition |