Growth of large single-crystalline monolayer hexagonal boron nitride by oxide-assisted chemical vapor deposition
e show how an oxide passivating layer on the Cu surface before the growth of h-BN by chemical vapor deposition (CVD) can lead to increased domain sizes from 1 to 20 μm by reducing the nucleation density from 10 6 to 10 3 mm -2 . The h-BN domains within each Cu grain are well-oriented, indicating a...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Published: |
American Chemical Society
2017
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