Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms
Si nanowires grow rapidly by chemical vapor deposition on Ti-containing islands on Si surfaces when an abundant supply of Si-containing gaseous precursor is available. The density of wires is approximately the same as the density of the nucleating islands on the Si surface, although at least two dif...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2001
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