Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects
We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe- Al2 O3 thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system give...
| Autores principales: | , , , , , , , |
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| Formato: | Journal article |
| Lenguaje: | English |
| Publicado: |
2008
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| _version_ | 1826282439600766976 |
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| author | Robertson, J Zhong, G Telg, H Thomsen, C Warner, J Briggs, G Dettlaff-Weglikowska, U Roth, S |
| author_facet | Robertson, J Zhong, G Telg, H Thomsen, C Warner, J Briggs, G Dettlaff-Weglikowska, U Roth, S |
| author_sort | Robertson, J |
| collection | OXFORD |
| description | We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe- Al2 O3 thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system gives rise to a broad range of nanotube diameters, with no preferential selectivity of semiconducting tubes, but with at least 13 of metallic tubes. © 2008 American Institute of Physics. |
| first_indexed | 2024-03-07T00:43:52Z |
| format | Journal article |
| id | oxford-uuid:83f83ba4-ede1-4813-a8a2-e62a912e3ad8 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T00:43:52Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | oxford-uuid:83f83ba4-ede1-4813-a8a2-e62a912e3ad82022-03-26T21:47:53ZGrowth and characterization of high-density mats of single-walled carbon nanotubes for interconnectsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:83f83ba4-ede1-4813-a8a2-e62a912e3ad8EnglishSymplectic Elements at Oxford2008Robertson, JZhong, GTelg, HThomsen, CWarner, JBriggs, GDettlaff-Weglikowska, URoth, SWe grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe- Al2 O3 thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system gives rise to a broad range of nanotube diameters, with no preferential selectivity of semiconducting tubes, but with at least 13 of metallic tubes. © 2008 American Institute of Physics. |
| spellingShingle | Robertson, J Zhong, G Telg, H Thomsen, C Warner, J Briggs, G Dettlaff-Weglikowska, U Roth, S Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects |
| title | Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects |
| title_full | Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects |
| title_fullStr | Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects |
| title_full_unstemmed | Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects |
| title_short | Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects |
| title_sort | growth and characterization of high density mats of single walled carbon nanotubes for interconnects |
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