SPUTTERING OF A CU SOLID BY SICL4 MOLECULES
We present a theoretical investigation on the sputtering of a Cu solid by SiCl//4 molecules. The classical trajectory method is used to calculate Cu atom sputtering yields, degrees of anisotropy, kinetic energy distributions and angular distributions for collision energies up to 1000 eV. The only pr...
| Autors principals: | , , |
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| Format: | Journal article |
| Idioma: | English |
| Publicat: |
1987
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| Sumari: | We present a theoretical investigation on the sputtering of a Cu solid by SiCl//4 molecules. The classical trajectory method is used to calculate Cu atom sputtering yields, degrees of anisotropy, kinetic energy distributions and angular distributions for collision energies up to 1000 eV. The only products of the sputtering process are Cu atoms. However, CuCl molecules do form on the surface. Results for Ar** plus ion sputtering of the Cu solid are also reported for comparison with those for SiCl//4. It is found that the etching yield for the SiCl//4 molecules at energy E is close to five times that for Ar** plus at energy E/5. This is because the SiCl//4 molecule dissociates on impact to give five individual atoms. |
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