Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Language
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
Effects of Surface Recombinati...
Cite this
Text this
Email this
Print
Export Record
Export to RefWorks
Export to EndNoteWeb
Export to EndNote
Permanent link
Effects of Surface Recombination on Exciton Dynamics in GaN Nanorods
Bibliographic Details
Main Authors:
Park, Y
,
Kang, T
,
Im, H
,
Lee, S
,
Cho, Y
,
Park, C
,
Han, M
,
Taylor, R
Format:
Journal article
Published:
2009
Holdings
Description
Similar Items
Staff View
Description
Summary:
Similar Items
GaN nanorods grown on Si (111) substrates and exciton localization
by: Holmes Mark, et al.
Published: (2011-01-01)
GaN nanorods grown on Si (111) substrates and exciton localization.
by: Park, Y, et al.
Published: (2011)
GaN nanorods grown on Si (111) substrates and exciton localization
by: Park, Y, et al.
Published: (2011)
Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
by: Park, Y, et al.
Published: (2018)
Micro- and Time-resolved Photoluminescence in GaN Nanorods with Different Diameters
by: Park, Y, et al.
Published: (2010)