Two-dimensional modelling of electron flow through a poorly conducting layer
Motivated by contact resistance on the front side of a crystalline silicon solar cell, we formulate and analyse a two-dimensional mathematical model for electron flow across a poorly conducting (glass) layer situated between silver electrodes, based on the drift-diffusion (Poisson-Nernst-Planck) equ...
Main Authors: | , , |
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Format: | Journal article |
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Society for Industrial and Applied Mathematics
2015
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_version_ | 1826282968025399296 |
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author | Black, J Breward, C Howell, P |
author_facet | Black, J Breward, C Howell, P |
author_sort | Black, J |
collection | OXFORD |
description | Motivated by contact resistance on the front side of a crystalline silicon solar cell, we formulate and analyse a two-dimensional mathematical model for electron flow across a poorly conducting (glass) layer situated between silver electrodes, based on the drift-diffusion (Poisson-Nernst-Planck) equations. We devise and validate a novel spectral method to solve this model numerically. We find that the current short-circuits through thin glass layer regions. This enables us to determine asymptotic expressions for the average current density for two different canonical glass layer profiles. |
first_indexed | 2024-03-07T00:51:50Z |
format | Journal article |
id | oxford-uuid:86ab1477-aff9-4304-bc97-d2d17fa98442 |
institution | University of Oxford |
last_indexed | 2024-03-07T00:51:50Z |
publishDate | 2015 |
publisher | Society for Industrial and Applied Mathematics |
record_format | dspace |
spelling | oxford-uuid:86ab1477-aff9-4304-bc97-d2d17fa984422022-03-26T22:05:28ZTwo-dimensional modelling of electron flow through a poorly conducting layerJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:86ab1477-aff9-4304-bc97-d2d17fa98442Symplectic Elements at OxfordSociety for Industrial and Applied Mathematics2015Black, JBreward, CHowell, PMotivated by contact resistance on the front side of a crystalline silicon solar cell, we formulate and analyse a two-dimensional mathematical model for electron flow across a poorly conducting (glass) layer situated between silver electrodes, based on the drift-diffusion (Poisson-Nernst-Planck) equations. We devise and validate a novel spectral method to solve this model numerically. We find that the current short-circuits through thin glass layer regions. This enables us to determine asymptotic expressions for the average current density for two different canonical glass layer profiles. |
spellingShingle | Black, J Breward, C Howell, P Two-dimensional modelling of electron flow through a poorly conducting layer |
title | Two-dimensional modelling of electron flow through a poorly conducting
layer |
title_full | Two-dimensional modelling of electron flow through a poorly conducting
layer |
title_fullStr | Two-dimensional modelling of electron flow through a poorly conducting
layer |
title_full_unstemmed | Two-dimensional modelling of electron flow through a poorly conducting
layer |
title_short | Two-dimensional modelling of electron flow through a poorly conducting
layer |
title_sort | two dimensional modelling of electron flow through a poorly conducting layer |
work_keys_str_mv | AT blackj twodimensionalmodellingofelectronflowthroughapoorlyconductinglayer AT brewardc twodimensionalmodellingofelectronflowthroughapoorlyconductinglayer AT howellp twodimensionalmodellingofelectronflowthroughapoorlyconductinglayer |