TEMPERATURE-DEPENDENCE OF THE BAND OVERLAP IN INAS/GASB STRUCTURES

Ítems similars

• ORIENTATION AND PRESSURE-DEPENDENCE OF THE BAND OVERLAP IN INAS/GASB STRUCTURES
  per: Symons, D, et al.
  Publicat: (1994)
• Interface composition dependence of the band offset in InAs/GaSb
  per: Daly, MS, et al.
  Publicat: (1996)
• Interface composition dependence of the band offset in InAs/GaSb
  per: Daly, MS, et al.
  Publicat: (1996)
• GROWTH OF INAS/GASB STRAINED-LAYER SUPERLATTICES .1.
  per: Booker, G, et al.
  Publicat: (1994)
• ONE-DIMENSIONAL TRANSPORT AND GATING OF INAS/GASB STRUCTURES
  per: Chen, Y, et al.
  Publicat: (1994)