Lattice effects on the magnetoresistance in doped LaMnO3.

A detailed study of doped LaMnO3 with fixed carrier concentration reveals a direct relationship between the Curie temperature Tc and the average ionic radius of the La site rA, which is varied by substituting different rare earth ions for La. With decreasing rA, magnetic order and significant magnet...

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Main Authors: Hwang, H, Cheong, S, Radaelli, P, Marezio, M, Batlogg, B
Format: Journal article
Language:English
Published: 1995
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author Hwang, H
Cheong, S
Radaelli, P
Marezio, M
Batlogg, B
author_facet Hwang, H
Cheong, S
Radaelli, P
Marezio, M
Batlogg, B
author_sort Hwang, H
collection OXFORD
description A detailed study of doped LaMnO3 with fixed carrier concentration reveals a direct relationship between the Curie temperature Tc and the average ionic radius of the La site rA, which is varied by substituting different rare earth ions for La. With decreasing rA, magnetic order and significant magnetoresistance occur at lower temperatures with increasing thermal hysteresis, and the magnitude of the magnetoresistance increases dramatically. These results show that the notion of "double exchange" must be generalized to include changes in the Mn-Mn electronic hopping parameter as a result of changes in the Mn-O-Mn bond angle. © 1995 The American Physical Society.
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spelling oxford-uuid:87b53747-a7af-4e26-9a06-4ac30c6704c02022-03-26T22:12:17ZLattice effects on the magnetoresistance in doped LaMnO3.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:87b53747-a7af-4e26-9a06-4ac30c6704c0EnglishSymplectic Elements at Oxford1995Hwang, HCheong, SRadaelli, PMarezio, MBatlogg, BA detailed study of doped LaMnO3 with fixed carrier concentration reveals a direct relationship between the Curie temperature Tc and the average ionic radius of the La site rA, which is varied by substituting different rare earth ions for La. With decreasing rA, magnetic order and significant magnetoresistance occur at lower temperatures with increasing thermal hysteresis, and the magnitude of the magnetoresistance increases dramatically. These results show that the notion of "double exchange" must be generalized to include changes in the Mn-Mn electronic hopping parameter as a result of changes in the Mn-O-Mn bond angle. © 1995 The American Physical Society.
spellingShingle Hwang, H
Cheong, S
Radaelli, P
Marezio, M
Batlogg, B
Lattice effects on the magnetoresistance in doped LaMnO3.
title Lattice effects on the magnetoresistance in doped LaMnO3.
title_full Lattice effects on the magnetoresistance in doped LaMnO3.
title_fullStr Lattice effects on the magnetoresistance in doped LaMnO3.
title_full_unstemmed Lattice effects on the magnetoresistance in doped LaMnO3.
title_short Lattice effects on the magnetoresistance in doped LaMnO3.
title_sort lattice effects on the magnetoresistance in doped lamno3
work_keys_str_mv AT hwangh latticeeffectsonthemagnetoresistanceindopedlamno3
AT cheongs latticeeffectsonthemagnetoresistanceindopedlamno3
AT radaellip latticeeffectsonthemagnetoresistanceindopedlamno3
AT mareziom latticeeffectsonthemagnetoresistanceindopedlamno3
AT batloggb latticeeffectsonthemagnetoresistanceindopedlamno3