Bruford, J., Rogers, D., & Rodriguez, T. (2023). Cryogenic rds(on) of a GaN power transistor at high currents. IEEE.
Chicago Style (17th ed.) CitationBruford, J., DJ Rogers, and T. Rodriguez. Cryogenic Rds(on) of a GaN Power Transistor at High Currents. IEEE, 2023.
MLA引文Bruford, J., et al. Cryogenic Rds(on) of a GaN Power Transistor at High Currents. IEEE, 2023.
警告:這些引文格式不一定是100%准確.