Cryogenic rds(on) of a GaN power transistor at high currents

Cryogenic rds(on) of a GaN power transistor at high currents

The dramatic reduction in the on-state resistance of Gallium Nitride (GaN) HEMTs at cryogenic temperatures can be exploited to reduce conduction losses in power converters. In this paper, we present a low-cost and easily implementable methodology for the characterisation of the on-state resistance o...

Fuld beskrivelse

Bibliografiske detaljer
Main Authors:	Bruford, J, Rogers, DJ, Rodriguez, T
Format:	Conference item
Sprog:	English
Udgivet:	IEEE 2023

Lignende værker

Nanostructured GaN transistors
af: Chowdhury, Nadim, et al.
Udgivet: (2019)

RF Power Degradation of GaN High Electron Mobility Transistors
af: Joh, Jungwoo, et al.
Udgivet: (2012)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
af: Sun, Xiaowei, et al.
Udgivet: (2013)

p-GaN Platform for Next-Generation GaN Complementary Transistors and Circuits
af: Xie, Qingyun
Udgivet: (2024)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
af: Zhang, Zi-Hui, et al.
Udgivet: (2013)

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
af: Sasangka, W.A., et al.
Udgivet: (2019)

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
af: Gao, Yu, et al.
Udgivet: (2019)

Degradation mechanisms of GaN high electron mobility transistors
af: Joh, Jungwoo
Udgivet: (2007)

Fabrication of graphene-on-GaN vertical transistors
af: Zubair, Ahmad, Ph.D. Massachusetts Institute of Technology
Udgivet: (2015)

Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
af: Lau, Sien Hui
Udgivet: (2020)

Design-space and scalable technology for GaN based power transistors
af: Piedra, Daniel, Ph. D. Massachusetts Institute of Technology
Udgivet: (2018)

Pulsed current-voltage characteristics of AlGaN/GaN high-electron-mobility-transistors on HR-Si substrate
af: Lee, Wei Yi.
Udgivet: (2009)

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
af: Li, Yang, et al.
Udgivet: (2017)

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
af: Lu, Bin, et al.
Udgivet: (2012)

Studies of traps in AlGaN/GaN high electron mobility transistors on silicon
af: Anand Mulagumoottil Jesudas
Udgivet: (2016)

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors
af: Marino, Fabio Alessio, et al.
Udgivet: (2011)

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments
af: Ruzzarin, M., et al.
Udgivet: (2019)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
af: Kyaw, Zabu, et al.
Udgivet: (2014)

Degradation of GaN High Electron Mobility Transistors under high-power and high-temperature stress
af: Wu, Yufei, Ph. D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science.
Udgivet: (2014)

SPICE simulation assisted-dynamic Rds(on) characterization in 200V commercial Schottky p- GaN HEMTs under unstable phases
af: Liu, Xinzhi, et al.
Udgivet: (2024)

Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress
af: Chen, C.-Y., et al.
Udgivet: (2015)

Degradation study of GaN-based high electron mobility transistors
af: Lius, Melina Novalia Jontera
Udgivet: (2023)

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors
af: Joh, Jungwoo, et al.
Udgivet: (2010)

Dynamic ON-resistance in high voltage GaN field-effect-transistors
af: Jin, Donghyun
Udgivet: (2014)

Reliability of GaN high electron mobility transistors on silicon substrates
af: Demirtas, Sefa
Udgivet: (2010)

Electric field engineering in GaN high electron mobility transistors
af: Zhao, Xu, S.M. Massachusetts Institute of Technology
Udgivet: (2008)

Physics of electrical degradation in GaN high electron mobility transistors
af: Joh, Jungwoo
Udgivet: (2010)

Methodology for assessing the reliability of GaN high-electron-mobility transistors
af: Gunawan, Anton.
Udgivet: (2012)

Highly sensitive gas sensor based on GaN transistor structure
af: Imran
Udgivet: (2020)

Characterizations of GaN-based high-electron-mobility-transistors (hemts)
af: Wong, Wei Jie.
Udgivet: (2012)

Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors
af: Dreyer, Cyrus E., et al.
Udgivet: (2017)

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors
af: Li, Libing, et al.
Udgivet: (2014)

GaN power electronics
af: Lu, Bin, et al.
Udgivet: (2012)

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor
af: Lu, Bin, et al.
Udgivet: (2012)

Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
af: Jayanta Joglekar, Sameer
Udgivet: (2017)

On-state reliability study of AlGaN/GaN high electron mobility transistor on silicon
af: Syaranamual, Govindo Joannesha
Udgivet: (2018)

Measuring Dynamic On Resistance in GaN Transistors at MHz Frequencies
af: Galapon, Bryson, et al.
Udgivet: (2020)

Regrown ohmic contact to GaN-based high electron mobility transistors
af: Tan, Eleen
Udgivet: (2023)

Deeply-scaled GaN high electron mobility transistors for RF applications
af: Lee, Dong Seup
Udgivet: (2014)

Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)
af: Phia, Chen Yew
Udgivet: (2020)