Effect of carrier-induced hydrogenation on the passivation of the poly-Si/SiOx/c-Si interface

Dades bibliogràfiques
Autors principals:	Yang, Y, Altermatt, P, Cui, Y, Hu, Y, Chen, D, Chen, L, Xu, G, Zhang, X, Chen, Y, Hamer, P, Bonilla, R, Feng, Z, Verlinden, P
Format:	Conference item
Publicat:	AIP Publishing 2018

Ítems similars