Effect of carrier-induced hydrogenation on the passivation of the poly-Si/SiOx/c-Si interface

Effect of carrier-induced hydrogenation on the passivation of the poly-Si/SiOx/c-Si interface

Библиографические подробности
Главные авторы: Yang, Y, Altermatt, P, Cui, Y, Hu, Y, Chen, D, Chen, L, Xu, G, Zhang, X, Chen, Y, Hamer, P, Bonilla, R, Feng, Z, Verlinden, P
Формат: Conference item
Опубликовано: AIP Publishing 2018

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