Reducing nonradiative losses in perovskite LEDs through atomic layer deposition of Al2O3 on the hole-injection contact
Halide perovskite light-emitting diodes (PeLEDs) exhibit great potential for use in next-generation display technologies. However, scale-up will be challenging due to the requirement of very thin transport layers for high efficiencies, which often present spatial inhomogeneities from improper wettin...
| Main Authors: | , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
American Chemical Society
2023
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| _version_ | 1797109623681974272 |
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| author | Dyrvik, E Warby, J McCarthy, M Ramadan, A Zaininger, K-A Lauritzen, A Mahesh, S Taylor, R Snaith, H |
| author_facet | Dyrvik, E Warby, J McCarthy, M Ramadan, A Zaininger, K-A Lauritzen, A Mahesh, S Taylor, R Snaith, H |
| author_sort | Dyrvik, E |
| collection | OXFORD |
| description | Halide perovskite light-emitting diodes (PeLEDs) exhibit great potential for use in next-generation display technologies. However, scale-up will be challenging due to the requirement of very thin transport layers for high efficiencies, which often present spatial inhomogeneities from improper wetting and drying during solution processing. Here, we show how a thin Al2O3 layer grown by atomic layer deposition can be used to preferentially cover regions of imperfect hole transport layer deposition and form an intermixed composite with the organic transport layer, allowing hole conduction and injection to persist through the organic hole transporter. This has the dual effect of reducing nonradiative recombination at the heterojunction and improving carrier selectivity, which we infer to be due to the inhibition of direct contact between the indium tin oxide and perovskite layers. We observe an immediate improvement in electroluminescent external quantum efficiency in our p-i-n LEDs from an average of 9.8% to 13.5%, with a champion efficiency of 15.0%. The technique uses industrially available equipment and can readily be scaled up to larger areas and incorporated in other applications such as thin-film photovoltaic cells. |
| first_indexed | 2024-03-07T07:44:07Z |
| format | Journal article |
| id | oxford-uuid:8a762c96-b3e5-40f6-9195-6bb1007b9fae |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T07:44:07Z |
| publishDate | 2023 |
| publisher | American Chemical Society |
| record_format | dspace |
| spelling | oxford-uuid:8a762c96-b3e5-40f6-9195-6bb1007b9fae2023-05-17T11:31:53ZReducing nonradiative losses in perovskite LEDs through atomic layer deposition of Al2O3 on the hole-injection contactJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:8a762c96-b3e5-40f6-9195-6bb1007b9faeEnglishSymplectic ElementsAmerican Chemical Society2023Dyrvik, EWarby, JMcCarthy, MRamadan, AZaininger, K-ALauritzen, AMahesh, STaylor, RSnaith, HHalide perovskite light-emitting diodes (PeLEDs) exhibit great potential for use in next-generation display technologies. However, scale-up will be challenging due to the requirement of very thin transport layers for high efficiencies, which often present spatial inhomogeneities from improper wetting and drying during solution processing. Here, we show how a thin Al2O3 layer grown by atomic layer deposition can be used to preferentially cover regions of imperfect hole transport layer deposition and form an intermixed composite with the organic transport layer, allowing hole conduction and injection to persist through the organic hole transporter. This has the dual effect of reducing nonradiative recombination at the heterojunction and improving carrier selectivity, which we infer to be due to the inhibition of direct contact between the indium tin oxide and perovskite layers. We observe an immediate improvement in electroluminescent external quantum efficiency in our p-i-n LEDs from an average of 9.8% to 13.5%, with a champion efficiency of 15.0%. The technique uses industrially available equipment and can readily be scaled up to larger areas and incorporated in other applications such as thin-film photovoltaic cells. |
| spellingShingle | Dyrvik, E Warby, J McCarthy, M Ramadan, A Zaininger, K-A Lauritzen, A Mahesh, S Taylor, R Snaith, H Reducing nonradiative losses in perovskite LEDs through atomic layer deposition of Al2O3 on the hole-injection contact |
| title | Reducing nonradiative losses in perovskite LEDs through atomic layer deposition of Al2O3 on the hole-injection contact |
| title_full | Reducing nonradiative losses in perovskite LEDs through atomic layer deposition of Al2O3 on the hole-injection contact |
| title_fullStr | Reducing nonradiative losses in perovskite LEDs through atomic layer deposition of Al2O3 on the hole-injection contact |
| title_full_unstemmed | Reducing nonradiative losses in perovskite LEDs through atomic layer deposition of Al2O3 on the hole-injection contact |
| title_short | Reducing nonradiative losses in perovskite LEDs through atomic layer deposition of Al2O3 on the hole-injection contact |
| title_sort | reducing nonradiative losses in perovskite leds through atomic layer deposition of al2o3 on the hole injection contact |
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