THE ADSORPTION AND THERMAL-DECOMPOSITION OF HYDROGEN-SULFIDE ON GAAS(100)
The adsorption of H2S on the Ga-rich GaAs(100)(4 × 1) surface has been investigated using HREELS, TDS and AES techniques. At substrate temperatures of 190 K, it is observed that dissociative adsorption occurs initially to produce SH and H species, with the latter bonded to both Ga and As surface sit...
| Main Authors: | , |
|---|---|
| Format: | Journal article |
| Published: |
1994
|