Formation of shallow acceptor states in the surface region of thin film diamond
Considerable interest exists in fabrication of electronic devices from thin film polycrystalline diamond. To date, doping this material to achieve good free carrier concentrations and mobilities at room temperature has proved difficult. In this letter we report low temperature Hall effect measuremen...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2001
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