GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM
The behavior of semiconductors is affected by the presence and distribution of dopants. The properties involved range from electrical resistivity and carrier concentration to grain boundary mobility and self-diffusion. Understanding these phenomena necessitates the characterization of defect structu...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
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1984
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| _version_ | 1797080776246820864 |
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| author | Smith, D Grovenor, C Batson, P Wong, C |
| author_facet | Smith, D Grovenor, C Batson, P Wong, C |
| author_sort | Smith, D |
| collection | OXFORD |
| description | The behavior of semiconductors is affected by the presence and distribution of dopants. The properties involved range from electrical resistivity and carrier concentration to grain boundary mobility and self-diffusion. Understanding these phenomena necessitates the characterization of defect structure and chemistry. STEM analysis has been applied to the measurement of arsenic segregation to silicon grain boundaries. Quantitative information on the boundary concentration of arsenic has been obtained both on as-deposited and annealed polysilicon specimens. In addition, the dynamic interaction of solutes with grain boundaries in polycrystalline germanium has been investigated. |
| first_indexed | 2024-03-07T01:05:01Z |
| format | Journal article |
| id | oxford-uuid:8b087f42-faab-4eaa-8250-e3614cfb9813 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T01:05:01Z |
| publishDate | 1984 |
| record_format | dspace |
| spelling | oxford-uuid:8b087f42-faab-4eaa-8250-e3614cfb98132022-03-26T22:35:33ZGRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUMJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:8b087f42-faab-4eaa-8250-e3614cfb9813EnglishSymplectic Elements at Oxford1984Smith, DGrovenor, CBatson, PWong, CThe behavior of semiconductors is affected by the presence and distribution of dopants. The properties involved range from electrical resistivity and carrier concentration to grain boundary mobility and self-diffusion. Understanding these phenomena necessitates the characterization of defect structure and chemistry. STEM analysis has been applied to the measurement of arsenic segregation to silicon grain boundaries. Quantitative information on the boundary concentration of arsenic has been obtained both on as-deposited and annealed polysilicon specimens. In addition, the dynamic interaction of solutes with grain boundaries in polycrystalline germanium has been investigated. |
| spellingShingle | Smith, D Grovenor, C Batson, P Wong, C GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM |
| title | GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM |
| title_full | GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM |
| title_fullStr | GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM |
| title_full_unstemmed | GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM |
| title_short | GRAIN-BOUNDARY SOLUTE INTERACTIONS IN POLYCRYSTALLINE SILICON AND GERMANIUM |
| title_sort | grain boundary solute interactions in polycrystalline silicon and germanium |
| work_keys_str_mv | AT smithd grainboundarysoluteinteractionsinpolycrystallinesiliconandgermanium AT grovenorc grainboundarysoluteinteractionsinpolycrystallinesiliconandgermanium AT batsonp grainboundarysoluteinteractionsinpolycrystallinesiliconandgermanium AT wongc grainboundarysoluteinteractionsinpolycrystallinesiliconandgermanium |