The growth rate effect on the nitrogen aggregation in HTHP grown synthetic diamonds

Plates cut out parallel to the (110) plane from high quality synthetic diamond crystals grown in the Fe-Ni-C system by a temperature gradient method at pressure 6 Gpa and temperature 1500-1550 degrees C were comprehensively studied. Analysis of the sector structure allows determination of the averag...

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Main Authors: Babich, Y, Feigelson, B, Fisher, D, Yelisseyev, A, Nadolinny, V, Baker, M
Format: Conference item
Published: Elsevier 2000
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author Babich, Y
Feigelson, B
Fisher, D
Yelisseyev, A
Nadolinny, V
Baker, M
author_facet Babich, Y
Feigelson, B
Fisher, D
Yelisseyev, A
Nadolinny, V
Baker, M
author_sort Babich, Y
collection OXFORD
description Plates cut out parallel to the (110) plane from high quality synthetic diamond crystals grown in the Fe-Ni-C system by a temperature gradient method at pressure 6 Gpa and temperature 1500-1550 degrees C were comprehensively studied. Analysis of the sector structure allows determination of the average and relative growth rates of each octahedral growth sector. Concentrations of nitrogen-related C, A, and Ni centers in some profiles of different octahedral growth sectors were analyzed by FTIR spectroscopy. The regularities of the spatial distribution of A-defects are consistent with the assumption that A-defects were formed in the crystals as a result of annealing during crystal growth. It was found that A-defect formation proceeds more intensively in octahedral growth sectors which were formed at higher linear growth rates. Possible mechanisms for the growth rate effect on the nitrogen aggregation process in synthetic diamonds are proposed. (C) 2000 Elsevier Science S.A. All rights reserved.
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spelling oxford-uuid:8b344bbd-0101-4c02-9106-8e778d4c58052022-03-26T22:36:35ZThe growth rate effect on the nitrogen aggregation in HTHP grown synthetic diamondsConference itemhttp://purl.org/coar/resource_type/c_5794uuid:8b344bbd-0101-4c02-9106-8e778d4c5805Symplectic Elements at OxfordElsevier2000Babich, YFeigelson, BFisher, DYelisseyev, ANadolinny, VBaker, MPlates cut out parallel to the (110) plane from high quality synthetic diamond crystals grown in the Fe-Ni-C system by a temperature gradient method at pressure 6 Gpa and temperature 1500-1550 degrees C were comprehensively studied. Analysis of the sector structure allows determination of the average and relative growth rates of each octahedral growth sector. Concentrations of nitrogen-related C, A, and Ni centers in some profiles of different octahedral growth sectors were analyzed by FTIR spectroscopy. The regularities of the spatial distribution of A-defects are consistent with the assumption that A-defects were formed in the crystals as a result of annealing during crystal growth. It was found that A-defect formation proceeds more intensively in octahedral growth sectors which were formed at higher linear growth rates. Possible mechanisms for the growth rate effect on the nitrogen aggregation process in synthetic diamonds are proposed. (C) 2000 Elsevier Science S.A. All rights reserved.
spellingShingle Babich, Y
Feigelson, B
Fisher, D
Yelisseyev, A
Nadolinny, V
Baker, M
The growth rate effect on the nitrogen aggregation in HTHP grown synthetic diamonds
title The growth rate effect on the nitrogen aggregation in HTHP grown synthetic diamonds
title_full The growth rate effect on the nitrogen aggregation in HTHP grown synthetic diamonds
title_fullStr The growth rate effect on the nitrogen aggregation in HTHP grown synthetic diamonds
title_full_unstemmed The growth rate effect on the nitrogen aggregation in HTHP grown synthetic diamonds
title_short The growth rate effect on the nitrogen aggregation in HTHP grown synthetic diamonds
title_sort growth rate effect on the nitrogen aggregation in hthp grown synthetic diamonds
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