GASB HETEROSTRUCTURES GROWN BY MOVPE

GASB HETEROSTRUCTURES GROWN BY MOVPE

Dades bibliogràfiques
Autors principals:	Chidley, E, Haywood, S, Mallard, R, Mason, N, Nicholas, R, Walker, P, Warburton, R
Format:	Journal article
Publicat:	1988

Ítems similars

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
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PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
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GROWTH OF GASB BY MOVPE
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LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
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Electron-hole interactions and metal-insulator transitions in InAs/GaSb heterostructures
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ULTRA-HIGH MAGNETIC-FIELD CYCLOTRON-RESONANCE OF ZERO-GAP INAS/GASB SUPERLATTICES
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GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
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