Murphy, J., Bothe, K., Voronkov, V., & Falster, R. (2013). On the mechanism of recombination at oxide precipitates in silicon.
Chicago Style (17th ed.) CitationMurphy, J., K. Bothe, V. Voronkov, and R. Falster. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
ציטוט MLAMurphy, J., et al. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
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