Murphy, J., Bothe, K., Voronkov, V., & Falster, R. (2013). On the mechanism of recombination at oxide precipitates in silicon.
芝加哥风格引文Murphy, J., K. Bothe, V. Voronkov, 与 R. Falster. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
MLA引文Murphy, J., et al. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
警告：这些引文格式不一定是100％准确.