Murphy, J., Bothe, K., Voronkov, V., & Falster, R. (2013). On the mechanism of recombination at oxide precipitates in silicon.
Chicago Style (17th ed.) CitationMurphy, J., K. Bothe, V. Voronkov, and R. Falster. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
MLA (9th ed.) CitationMurphy, J., et al. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
Warning: These citations may not always be 100% accurate.