Murphy, J., Bothe, K., Voronkov, V., & Falster, R. (2013). On the mechanism of recombination at oxide precipitates in silicon.
Style de citation Chicago (17e éd.)Murphy, J., K. Bothe, V. Voronkov, et R. Falster. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
Style de citation MLA (9e éd.)Murphy, J., et al. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
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