Murphy, J., Bothe, K., Voronkov, V., & Falster, R. (2013). On the mechanism of recombination at oxide precipitates in silicon.
Citación estilo ChicagoMurphy, J., K. Bothe, V. Voronkov, and R. Falster. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
Cita MLAMurphy, J., et al. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
Warning: These citations may not always be 100% accurate.