Murphy, J., Bothe, K., Voronkov, V., & Falster, R. (2013). On the mechanism of recombination at oxide precipitates in silicon.
Čikaški stil citiranja (17. izdanje)Murphy, J., K. Bothe, V. Voronkov, i R. Falster. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
MLA način citiranja (9. izdanje)Murphy, J., et al. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
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