Murphy, J., Bothe, K., Voronkov, V., & Falster, R. (2013). On the mechanism of recombination at oxide precipitates in silicon.
Citazione stile Chigago Style (17a edizione)Murphy, J., K. Bothe, V. Voronkov, e R. Falster. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
Citatione MLA (9a ed.)Murphy, J., et al. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
Attenzione: Queste citazioni potrebbero non essere precise al 100%.