Murphy, J., Bothe, K., Voronkov, V., & Falster, R. (2013). On the mechanism of recombination at oxide precipitates in silicon.
Chicago Style (17th ed.) CitationMurphy, J., K. Bothe, V. Voronkov, and R. Falster. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
MLA引文Murphy, J., et al. On the Mechanism of Recombination at Oxide Precipitates in Silicon. 2013.
警告:這些引文格式不一定是100%准確.