On the mechanism of recombination at oxide precipitates in silicon

On the mechanism of recombination at oxide precipitates in silicon

Oxide precipitates are well known to degrade minority carrier lifetime in silicon, but the mechanism by which they act as recombination centres is not fully understood. We report minority carrier lifetime measurements on oxide precipitate-containing silicon which has been intentionally contaminated...

Bibliografski detalji
Glavni autori:	Murphy, J, Bothe, K, Voronkov, V, Falster, R
Format:	Journal article
Jezik:	English
Izdano:	2013

Slični predmeti

Recombination at oxide precipitates in silicon
od: Murphy, J, i dr.
Izdano: (2011)

The impact of oxide precipitates on minority carrier lifetime in Czochralski silicon
od: Murphy, J, i dr.
Izdano: (2012)

Minority carrier lifetime in Czochralski silicon containing oxide precipitates
od: Murphy, J, i dr.
Izdano: (2010)

The effect of oxide precipitates on minority carrier lifetime in p-type silicon
od: Murphy, J, i dr.
Izdano: (2011)

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
od: Murphy, J, i dr.
Izdano: (2012)

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
od: Murphy, J, i dr.
Izdano: (2014)

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
od: Murphy, J, i dr.
Izdano: (2014)

Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates
od: Bothe, K, i dr.
Izdano: (2012)

Spin-dependent recombination in Czochralski silicon containing oxide precipitates
od: Lang, V, i dr.
Izdano: (2012)

Onset of slip in silicon containing oxide precipitates
od: Jurkschat, K, i dr.
Izdano: (2001)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
od: Decoteau, M, i dr.
Izdano: (1991)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
od: Decoteau, M, i dr.
Izdano: (1991)

PRECIPITATION OF IRON IN SILICON - GETTERING TO EXTENDED SURFACE DEFECT SITES
od: Decoteau, M, i dr.
Izdano: (1991)

Nitrogen in silicon: Transport and mechanical properties
od: Murphy, J, i dr.
Izdano: (2006)

Nitrogen in silicon: Transport and mechanical properties
od: Murphy, J, i dr.
Izdano: (2006)

Contamination of silicon by iron at temperatures below 800 degrees C
od: Murphy, J, i dr.
Izdano: (2011)

The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750 degrees C
od: Murphy, J, i dr.
Izdano: (2012)

GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON
od: Decoteau, M, i dr.
Izdano: (1990)

GETTERING IN SILICON
od: Falster, R
Izdano: (1989)

Impurity locking of dislocations in silicon
od: Giannattasio, A, i dr.
Izdano: (2004)

Nitrogen-doped silicon: Mechanical, transport and electrical properties
od: Murphy, J, i dr.
Izdano: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
od: Murphy, J, i dr.
Izdano: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
od: Murphy, J, i dr.
Izdano: (2006)

Nitrogen diffusion and interaction with dislocations in single-crystal silicon
od: Alpass, C, i dr.
Izdano: (2009)

Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
od: Alpass, C, i dr.
Izdano: (2009)

Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
od: Alpass, C, i dr.
Izdano: (2009)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
od: Giannattasio, A, i dr.
Izdano: (2005)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
od: Murphy, J, i dr.
Izdano: (2006)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
od: Murphy, J, i dr.
Izdano: (2006)

Cathodoluminescence assessment of annealed silicon and a novel technique for estimating minority carrier lifetime in silicon
od: Fraser, K, i dr.
Izdano: (2009)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
od: Murphy, J, i dr.
Izdano: (2005)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
od: Murphy, J, i dr.
Izdano: (2005)

The influence of nitrogen on dislocation locking in float-zone silicon
od: Murphy, J, i dr.
Izdano: (2005)

The influence of nitrogen on dislocation locking in float-zone silicon
od: Murphy, J, i dr.
Izdano: (2005)

Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
od: Fraser, K, i dr.
Izdano: (2008)

Recombination mechanisms in crystalline silicon: bulk and surface contributions
od: Enrichetta Susi
Izdano: (1999-01-01)

Locking of dislocations by oxygen in Cz-silicon
od: Senkader, S, i dr.
Izdano: (1999)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)
od: Giannattasio, A, i dr.
Izdano: (2005)

Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
od: Alpass, C, i dr.
Izdano: (2007)

On the locking of dislocations by oxygen in silicon
od: Senkader, S, i dr.
Izdano: (2001)