On the mechanism of recombination at oxide precipitates in silicon

On the mechanism of recombination at oxide precipitates in silicon

Oxide precipitates are well known to degrade minority carrier lifetime in silicon, but the mechanism by which they act as recombination centres is not fully understood. We report minority carrier lifetime measurements on oxide precipitate-containing silicon which has been intentionally contaminated...

Bibliografiset tiedot
Päätekijät:	Murphy, J, Bothe, K, Voronkov, V, Falster, R
Aineistotyyppi:	Journal article
Kieli:	English
Julkaistu:	2013

Samankaltaisia teoksia

Recombination at oxide precipitates in silicon
Tekijä: Murphy, J, et al.
Julkaistu: (2011)

The impact of oxide precipitates on minority carrier lifetime in Czochralski silicon
Tekijä: Murphy, J, et al.
Julkaistu: (2012)

Minority carrier lifetime in Czochralski silicon containing oxide precipitates
Tekijä: Murphy, J, et al.
Julkaistu: (2010)

The effect of oxide precipitates on minority carrier lifetime in p-type silicon
Tekijä: Murphy, J, et al.
Julkaistu: (2011)

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
Tekijä: Murphy, J, et al.
Julkaistu: (2012)

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
Tekijä: Murphy, J, et al.
Julkaistu: (2014)

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
Tekijä: Murphy, J, et al.
Julkaistu: (2014)

Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates
Tekijä: Bothe, K, et al.
Julkaistu: (2012)

Spin-dependent recombination in Czochralski silicon containing oxide precipitates
Tekijä: Lang, V, et al.
Julkaistu: (2012)

Onset of slip in silicon containing oxide precipitates
Tekijä: Jurkschat, K, et al.
Julkaistu: (2001)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
Tekijä: Decoteau, M, et al.
Julkaistu: (1991)

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS
Tekijä: Decoteau, M, et al.
Julkaistu: (1991)

PRECIPITATION OF IRON IN SILICON - GETTERING TO EXTENDED SURFACE DEFECT SITES
Tekijä: Decoteau, M, et al.
Julkaistu: (1991)

Nitrogen in silicon: Transport and mechanical properties
Tekijä: Murphy, J, et al.
Julkaistu: (2006)

Nitrogen in silicon: Transport and mechanical properties
Tekijä: Murphy, J, et al.
Julkaistu: (2006)

Contamination of silicon by iron at temperatures below 800 degrees C
Tekijä: Murphy, J, et al.
Julkaistu: (2011)

The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750 degrees C
Tekijä: Murphy, J, et al.
Julkaistu: (2012)

GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON
Tekijä: Decoteau, M, et al.
Julkaistu: (1990)

GETTERING IN SILICON
Tekijä: Falster, R
Julkaistu: (1989)

Impurity locking of dislocations in silicon
Tekijä: Giannattasio, A, et al.
Julkaistu: (2004)

Nitrogen-doped silicon: Mechanical, transport and electrical properties
Tekijä: Murphy, J, et al.
Julkaistu: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
Tekijä: Murphy, J, et al.
Julkaistu: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
Tekijä: Murphy, J, et al.
Julkaistu: (2006)

Nitrogen diffusion and interaction with dislocations in single-crystal silicon
Tekijä: Alpass, C, et al.
Julkaistu: (2009)

Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
Tekijä: Alpass, C, et al.
Julkaistu: (2009)

Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
Tekijä: Alpass, C, et al.
Julkaistu: (2009)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
Tekijä: Giannattasio, A, et al.
Julkaistu: (2005)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
Tekijä: Murphy, J, et al.
Julkaistu: (2006)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
Tekijä: Murphy, J, et al.
Julkaistu: (2006)

Cathodoluminescence assessment of annealed silicon and a novel technique for estimating minority carrier lifetime in silicon
Tekijä: Fraser, K, et al.
Julkaistu: (2009)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
Tekijä: Murphy, J, et al.
Julkaistu: (2005)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
Tekijä: Murphy, J, et al.
Julkaistu: (2005)

The influence of nitrogen on dislocation locking in float-zone silicon
Tekijä: Murphy, J, et al.
Julkaistu: (2005)

The influence of nitrogen on dislocation locking in float-zone silicon
Tekijä: Murphy, J, et al.
Julkaistu: (2005)

Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
Tekijä: Fraser, K, et al.
Julkaistu: (2008)

Recombination mechanisms in crystalline silicon: bulk and surface contributions
Tekijä: Enrichetta Susi
Julkaistu: (1999-01-01)

Locking of dislocations by oxygen in Cz-silicon
Tekijä: Senkader, S, et al.
Julkaistu: (1999)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)
Tekijä: Giannattasio, A, et al.
Julkaistu: (2005)

Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
Tekijä: Alpass, C, et al.
Julkaistu: (2007)

On the locking of dislocations by oxygen in silicon
Tekijä: Senkader, S, et al.
Julkaistu: (2001)