On the mechanism of recombination at oxide precipitates in silicon

On the mechanism of recombination at oxide precipitates in silicon

Oxide precipitates are well known to degrade minority carrier lifetime in silicon, but the mechanism by which they act as recombination centres is not fully understood. We report minority carrier lifetime measurements on oxide precipitate-containing silicon which has been intentionally contaminated...

書誌詳細
主要な著者:	Murphy, J, Bothe, K, Voronkov, V, Falster, R
フォーマット:	Journal article
言語:	English
出版事項:	2013

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