TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
The EBIC contrast from extended defects in semiconductors can, in principle, be related to the defect capture cross-section for minority carriers and hence to the details of the recombination behaviour of individual defects. The monitoring of EBIC contrast as a function of temperature and dopant con...
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| Format: | Conference item |
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1983
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| _version_ | 1797081702028279808 |
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| author | Ourmazd, A Wilshaw, P Booker, G |
| author_facet | Ourmazd, A Wilshaw, P Booker, G |
| author_sort | Ourmazd, A |
| collection | OXFORD |
| description | The EBIC contrast from extended defects in semiconductors can, in principle, be related to the defect capture cross-section for minority carriers and hence to the details of the recombination behaviour of individual defects. The monitoring of EBIC contrast as a function of temperature and dopant concentration is proposed as a possible method for deducing the positions of energy levels associated with well-characterised, individual dislocations. Some results of such an investigation are presented to show that current theoretical interpretations of the EBIC contrast are unable to describe correctly the observed temperature-dependent properties of the contrast. Possible modifications, which may enable theoretical treatments to describe better the experimental results, are suggested. |
| first_indexed | 2024-03-07T01:17:41Z |
| format | Conference item |
| id | oxford-uuid:8f41dd20-2703-48ca-ae3b-1715feb99b85 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T01:17:41Z |
| publishDate | 1983 |
| record_format | dspace |
| spelling | oxford-uuid:8f41dd20-2703-48ca-ae3b-1715feb99b852022-03-26T23:03:06ZTEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.Conference itemhttp://purl.org/coar/resource_type/c_5794uuid:8f41dd20-2703-48ca-ae3b-1715feb99b85Symplectic Elements at Oxford1983Ourmazd, AWilshaw, PBooker, GThe EBIC contrast from extended defects in semiconductors can, in principle, be related to the defect capture cross-section for minority carriers and hence to the details of the recombination behaviour of individual defects. The monitoring of EBIC contrast as a function of temperature and dopant concentration is proposed as a possible method for deducing the positions of energy levels associated with well-characterised, individual dislocations. Some results of such an investigation are presented to show that current theoretical interpretations of the EBIC contrast are unable to describe correctly the observed temperature-dependent properties of the contrast. Possible modifications, which may enable theoretical treatments to describe better the experimental results, are suggested. |
| spellingShingle | Ourmazd, A Wilshaw, P Booker, G TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON. |
| title | TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON. |
| title_full | TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON. |
| title_fullStr | TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON. |
| title_full_unstemmed | TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON. |
| title_short | TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON. |
| title_sort | temperature dependence of ebic contrast from individual dislocations in silicon |
| work_keys_str_mv | AT ourmazda temperaturedependenceofebiccontrastfromindividualdislocationsinsilicon AT wilshawp temperaturedependenceofebiccontrastfromindividualdislocationsinsilicon AT bookerg temperaturedependenceofebiccontrastfromindividualdislocationsinsilicon |