Controlled radiation damage and edge structures in boron nitride membranes
We show that hexagonal boron nitride membranes synthesized by chemical exfoliation are more resistant to electron beam irradiation at 80 kV than is graphene, consistent with quantum chemical calculations describing the radiation damage processes. Monolayer hexagonal boron nitride does not form vacan...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
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2011
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| _version_ | 1826284793596215296 |
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| author | Kim, J Borisenko, K Nicolosi, V Kirkland, A |
| author_facet | Kim, J Borisenko, K Nicolosi, V Kirkland, A |
| author_sort | Kim, J |
| collection | OXFORD |
| description | We show that hexagonal boron nitride membranes synthesized by chemical exfoliation are more resistant to electron beam irradiation at 80 kV than is graphene, consistent with quantum chemical calculations describing the radiation damage processes. Monolayer hexagonal boron nitride does not form vacancy defects or amorphize during extended electron beam irradiation. Zigzag edge structures are predominant in thin membranes for both a freestanding boron nitride monolayer and for a supported multilayer step edge. We have also determined that the elemental termination species in the zigzag edges is predominantly N. © 2011 American Chemical Society. |
| first_indexed | 2024-03-07T01:19:11Z |
| format | Journal article |
| id | oxford-uuid:8fc13763-2a17-4530-ba18-def8cb84ba3e |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T01:19:11Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | oxford-uuid:8fc13763-2a17-4530-ba18-def8cb84ba3e2022-03-26T23:06:36ZControlled radiation damage and edge structures in boron nitride membranesJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:8fc13763-2a17-4530-ba18-def8cb84ba3eEnglishSymplectic Elements at Oxford2011Kim, JBorisenko, KNicolosi, VKirkland, AWe show that hexagonal boron nitride membranes synthesized by chemical exfoliation are more resistant to electron beam irradiation at 80 kV than is graphene, consistent with quantum chemical calculations describing the radiation damage processes. Monolayer hexagonal boron nitride does not form vacancy defects or amorphize during extended electron beam irradiation. Zigzag edge structures are predominant in thin membranes for both a freestanding boron nitride monolayer and for a supported multilayer step edge. We have also determined that the elemental termination species in the zigzag edges is predominantly N. © 2011 American Chemical Society. |
| spellingShingle | Kim, J Borisenko, K Nicolosi, V Kirkland, A Controlled radiation damage and edge structures in boron nitride membranes |
| title | Controlled radiation damage and edge structures in boron nitride membranes |
| title_full | Controlled radiation damage and edge structures in boron nitride membranes |
| title_fullStr | Controlled radiation damage and edge structures in boron nitride membranes |
| title_full_unstemmed | Controlled radiation damage and edge structures in boron nitride membranes |
| title_short | Controlled radiation damage and edge structures in boron nitride membranes |
| title_sort | controlled radiation damage and edge structures in boron nitride membranes |
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