Role of implantation-induced defects on the response time of semiconductor saturable absorbers
Main Authors: | Tan, H, Jagadish, C, Lederer, M, Luther-Davies, B, Zou, J, Cockayne, D, Haiml, M, Siegner, U, Keller, U |
---|---|
Format: | Journal article |
Published: |
1999
|
Similar Items
-
Ion-implanted GaAs for ultrafast saturable absorber applications
by: Lederer, M, et al.
Published: (2000) -
The effect of proton bombardment on semiconductor saturable absorber structure
by: Gopinath, Juliet Tara, 1976-
Published: (2005) -
{111} defects in 1-MeV-silicon-ion-implanted silicon.
by: Chou, C, et al.
Published: (1995) -
{111} and {311} rod-like defects in silicon ion implanted silicon
by: Chou, C, et al.
Published: (1996) -
DISLOCATION GEOMETRIES IN SEMICONDUCTORS AND IN SEMICONDUCTOR HETEROSTRUCTURES
by: Cockayne, D, et al.
Published: (1991)