Ultrahigh anomalous hall sensitivity in Co/Pt multilayers by interfacial modification
A large enhancement of anomalous Hall sensitivity (Sv) by metal/oxide interfacial modification is obtained in a MgO/[Co/Pt]3/MgO multilayered structure. The values of Sv are increased to 8363 V/A·T by CoO insertion and 2261 V/A·T by Pt insertion, while Sv is approximately 1000 V/A·T in normal Hall s...
| Main Authors: | , , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2013
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| _version_ | 1797082112986185728 |
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| author | Zhang, J Yang, G Wang, S Zhang, S Zhang, P Cao, X Jiang, S Zhao, C Liu, Y Wang, H Yu, G |
| author_facet | Zhang, J Yang, G Wang, S Zhang, S Zhang, P Cao, X Jiang, S Zhao, C Liu, Y Wang, H Yu, G |
| author_sort | Zhang, J |
| collection | OXFORD |
| description | A large enhancement of anomalous Hall sensitivity (Sv) by metal/oxide interfacial modification is obtained in a MgO/[Co/Pt]3/MgO multilayered structure. The values of Sv are increased to 8363 V/A·T by CoO insertion and 2261 V/A·T by Pt insertion, while Sv is approximately 1000 V/A·T in normal Hall semiconductor sensors. Microstructural analysis shows that the crystal orientation of [Co/Pt]3 multilayers is improved, and the oxygen concentration is largely changed by introducing an ultrathin CoO layer at metal/oxide interfaces, leading to a large increment of Sv. © 2013 The Japan Society of Applied Physics. |
| first_indexed | 2024-03-07T01:23:37Z |
| format | Journal article |
| id | oxford-uuid:91306627-e8d0-4ab9-93f4-d0e7215098bf |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T01:23:37Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | oxford-uuid:91306627-e8d0-4ab9-93f4-d0e7215098bf2022-03-26T23:17:08ZUltrahigh anomalous hall sensitivity in Co/Pt multilayers by interfacial modificationJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:91306627-e8d0-4ab9-93f4-d0e7215098bfEnglishSymplectic Elements at Oxford2013Zhang, JYang, GWang, SZhang, SZhang, PCao, XJiang, SZhao, CLiu, YWang, HYu, GA large enhancement of anomalous Hall sensitivity (Sv) by metal/oxide interfacial modification is obtained in a MgO/[Co/Pt]3/MgO multilayered structure. The values of Sv are increased to 8363 V/A·T by CoO insertion and 2261 V/A·T by Pt insertion, while Sv is approximately 1000 V/A·T in normal Hall semiconductor sensors. Microstructural analysis shows that the crystal orientation of [Co/Pt]3 multilayers is improved, and the oxygen concentration is largely changed by introducing an ultrathin CoO layer at metal/oxide interfaces, leading to a large increment of Sv. © 2013 The Japan Society of Applied Physics. |
| spellingShingle | Zhang, J Yang, G Wang, S Zhang, S Zhang, P Cao, X Jiang, S Zhao, C Liu, Y Wang, H Yu, G Ultrahigh anomalous hall sensitivity in Co/Pt multilayers by interfacial modification |
| title | Ultrahigh anomalous hall sensitivity in Co/Pt multilayers by interfacial modification |
| title_full | Ultrahigh anomalous hall sensitivity in Co/Pt multilayers by interfacial modification |
| title_fullStr | Ultrahigh anomalous hall sensitivity in Co/Pt multilayers by interfacial modification |
| title_full_unstemmed | Ultrahigh anomalous hall sensitivity in Co/Pt multilayers by interfacial modification |
| title_short | Ultrahigh anomalous hall sensitivity in Co/Pt multilayers by interfacial modification |
| title_sort | ultrahigh anomalous hall sensitivity in co pt multilayers by interfacial modification |
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