PRECIPITATION OF IRON IN SILICON - GETTERING TO EXTENDED SURFACE DEFECT SITES
The gettering of Fe to extended surface defect sites, namely surface pits and oxidation induced stacking faults, has been studied. It is found that, for the conditions investigated, gettering of Fe proceeds by generation of an impurity/crystal defect complex, rather than nucleation of FeSi2 precipit...
| Main Authors: | , , |
|---|---|
| Format: | Conference item |
| Published: |
1991
|