Growth of metal-phthalocyanine on GaAs(001): an NEXAFS study
Organic semiconductors molecules are often employed as a thin film interlayer to improve electronic and optoelectronic devices. The characterisation of the interface is thus important to understand the physical properties between the organic thin film and the inorganic semiconductor substrate. Also...
Main Authors: | Cabailh, G, McGovern, I, Vearey-Roberts, A, Bushell, A, Evans, D |
---|---|
Format: | Conference item |
Published: |
2005
|
Similar Items
-
Synchrotron radiation studies of the growth and beam damage of tin-phthalocyanine on GaAs(001)-1x6 substrates
by: Cabailh, G, et al.
Published: (2004) -
Soft x-ray photoelectron spectroscopy of tin-phthalocyanine/GaAs(001)-1 x 6 interface formation
by: Cabailh, G, et al.
Published: (2003) -
Real-time monitoring of the evolving morphology and molecular structure at an organic-inorganic semiconductor interface: SnPc on GaAs(001)
by: Evans, D, et al.
Published: (2010) -
An XPS study of the interaction between tin(II) phthalocyanine and polycrystalline iron
by: Wells, J, et al.
Published: (2004) -
MBE growth and investigation of (001) GaAs surfaces using SIMS
by: Croydon, W. F.
Published: (1985)