Cita APA (7a ed.)

Feldmann, J., Youngblood, N., Li, X., Wright, C., Bhaskaran, H., & Pernice, W. (2019). Integrated 256 cell photonic phase-change memory with 512-bit capacity. Institute of Electrical and Electronics Engineers.

Cita Chicago Style (17a ed.)

Feldmann, J., N. Youngblood, X. Li, CD Wright, H. Bhaskaran, y WHP Pernice. Integrated 256 Cell Photonic Phase-change Memory with 512-bit Capacity. Institute of Electrical and Electronics Engineers, 2019.

Cita MLA (9a ed.)

Feldmann, J., et al. Integrated 256 Cell Photonic Phase-change Memory with 512-bit Capacity. Institute of Electrical and Electronics Engineers, 2019.