Deactivation and diffusion of boron in ion-implanted silicon: dopant mapping through secondary electron imaging
Secondary electron (SE) imaging in a scanning electron microscope is used to map electrically active dopant distributions of B-doped superlattices in Si. By comparing SE contrast profiles with secondary ion mass spectroscopy data, it is shown that B is electrically deactivated when the damage caused...
| Những tác giả chính: | , , , , |
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| Định dạng: | Conference item |
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1999
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| Tóm tắt: | Secondary electron (SE) imaging in a scanning electron microscope is used to map electrically active dopant distributions of B-doped superlattices in Si. By comparing SE contrast profiles with secondary ion mass spectroscopy data, it is shown that B is electrically deactivated when the damage caused during Si implantation falls onto a doped region. Following a 450 degreesC anneal, the effect of the implantation damage is severely reduced in the SE profiles and the B is partially reactivated. An 815 degreesC anneal results in transient enhanced diffusion of some of the B with the remainder trapped in an inactive immobile peak. |
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